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III-V Quantum Well Field Effect Transistor (QWFET)

The realization of improved high-performance transistors has become increasingly challenging due to difficult requirements for reduced power dissipation during operation and in stand-by mode, which are necessary to meet Moore’s Law by scaling down Si-based complementary metal-oxide-semiconductor (CMOS) devices. Moreover, increasing operating frequency and higher integration density make the power constraint issue even more challenging. Therefore, researchers have devoted much effort to develop high-performance transistors with high mobility and low operating voltage. The III-V semiconductors such as GaAs, InAs, InGaAs, GaN, InSb, etc. are the potential candidates for high-speed transistors with very low supply voltage. Among them the QWFET with InSb channel materials has a very high mobility than that of others. We have succeed to deposit high-k dielectric on the InSb QW using atomic layer deposition (ALD) technique experimentally. This triumph opens door to realize high-speed and low supply voltage InSb QWFET. We have successfully design and performance high-speed and low consumption voltage InSb QWFET studied by simulation. We are looking forward interested students (M.Sc./ M.Sc. Engr./ M.Phil.) on the III-V compound semiconductor base QWFET design and performance study by simulation.

Selected Publications

Sl No About
1 M. M. Uddin, H. W. Liu, K. F. Yang, K. Nagase, K. Sekine, C. K. Gaspe, T. D. Mishima, M. B. Santos, and Y. Hirayama, “Gate depletion of an InSb two dimensional electron gas” Appl. Phys. Lett. 103, 123502 (2013).
2 M. M. Uddin, H. W. Liu, K. F. Yang, K. Nagase, T. D. Mishima, M. B. Santos, and Y. Hirayama, “Characterization of InSb quantum wells with atomic layer deposited gate dielectrics” Appl. Phys. Lett. 101, 233503 (2012).
3 R. Islam, M. M. Uddin, M. A. Matin “Optimized Novel Indium Antimonide Quantum Well Field Effect Transistor for High-Speed and Low Power Logic Applications” ECS Transaction 69 (5), 3-8 (2015).
4 R. Islam, M. M. Uddin, M. Mofazzal Hossain, and M. A. Matin “Design and Performance Analysis of Depletion-Mode InSb Quantum-Well Field-Effect Transistor for Logic Applications” Accepted for publication in Journal of Molecular and Engineering Materials (World scientific).